1 n-channel 250-v (d-s) 175 c mosfet features ? t renchfet ? power mosfet ? 175 c junction temperature prod uct summary v ds (v) r ds(on) ( )i d (a) 250 0. 165 at v gs = 10 v 1 6 no t es: a. su rface mounted on 1" x 1" fr4 board. b. se e soa curve for voltage derating. t o-252 s gd top v iew drain connected to tab n-channel mosfet g d s absolute maximum ratings t a = 25 c, unless otherwise noted p arameter symbol limit unit drain-source voltage v ds 250 v gate-source v oltage v gs 20 contin uous drain current (t j = 175 c) b t c = 25 c i d 1 6 a t c = 125 c 9.8 pulsed d rain current i dm 20 contin uous source current (diode conduction) i s 16 sing le pulse avalanche current i as 5 sing le pulse avalanche energy l = 0.1 mh e as 1.25 mj maxi mum power dissipation t c = 25 c p d 136 b w t a = 25 c 3 a oper ating junction and storage temperature range t j , t stg - 55 to 175 c thermal resist ance ratings p a rameter symbol typical maximum unit junction-to-ambient a t 10 sec r th j a 15 1 8 c/w steady state 40 50 junction-to-case (drain) r th jc 0.85 1.1 rohs compliant www.din-tek.jp dt u 1 6n25
2 not e s: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. c. indep endent of operating temperature. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications t j = 25 c, unless otherwise noted pa ram eter symbol test conditions min typ a max u nit static drain-source breakdown v oltage v (br)dss v gs = 0 v , i d = 250 a 250 v gate th reshold v oltage v gs(t h) v ds = v gs , i d = 250 a 2.5 4.0 gate-b o dy leakage i gss v ds = 0 v , v gs = 2 0 v 100 na zero gate voltage drain current i dss v ds = 250 v, v gs = 0 v 1 a v ds = 250 v, v gs = 0 v, t j = 125 c 50 v ds = 250 v, v gs = 0 v, t j = 175 c 25 0 on-state drain current b i d(on ) v ds = 15 v , v gs = 10 v 16 a drain-source on-state re sista nce b r ds(o n) v gs = 10 v, i d = 14 a 0.131 0.165 v gs = 10 v, i d = 14 a, t j = 125 c 0.347 v gs = 10 v, i d = 14 a, t j = 175 c 0.462 f orward transconductance b g fs v ds = 15 v, i d = 16 a 36 s dynam i c a input capacita n ce c iss v gs = 0 v, v ds = 25 v, f = 1 mh z 1950 pf output c apacitance c oss 160 rev erse t ransfer capacitance c rss 70 to tal gate charge c q g v ds = 125 v, v gs = 10 v , i d = 16 a 30 42 nc gate-source charge c q gs 10 gate- dr a in charge c q gd 10 ga te re sistance r g 1.6 tu r n - o n d e l ay t i m e c t d(on ) v dd = 125 v, r l = 7.35 i d ? 16 a, v gen = 10 v , r g = 2.5 15 2 5 ns rise time c t r 130 19 5 t urn-off delay time c t d(off) 30 4 5 fa ll time c t f 100 15 0 source-drain diode ratings and characteristics (t c = 25 c) pulsed current i sm 20 a diode f orward voltage b v sd i f = 16 a, v gs = 0 v 0.9 1.5 v source-drain reverse recovery time t rr i f = 1 6 a, di/dt = 100 a/s 115 175 ns www.din-tek.jp dt u 1 6n25
3 typica l characteristics 25 c unless noted outp ut characteristics transconductance capacitance v ds - drain-to-source voltage (v) - drain current (a) i d 0 4 8 12 16 20 04 8121620 v gs = 10 thru 6 v 4 v 5 v 0 10 20 30 40 50 60 04 8121620 - t ransconductance (s) g fs t c = - 55 c 25 c 125 c i d - dr ain current (a) 0 700 1400 2100 2800 0 40 80 120 160 200 v ds - drain-to-source voltage (v) c - capacitance (pf) c os s c is s c rss tran sfer characteristics on-resistance vs. drain current gate charge v gs - gate-to-source voltage (v) - drain current (a) i d 0 4 8 12 16 20 0 123456 - 55 c t c = 125 c 25 c - on-resistance ( ) i d - drain current (a) r ds(on) 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 04 8121620 v gs = 10 v - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0 4 8 12 16 20 0 8 16 24 32 40 48 5 6 v ds = 125 v i d = 16 a www.din-tek.jp dt u 1 6n25
4 ty pi cal characteristics 25 c unless noted thermal ratings on -res istance vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 t j - j unction temperature (c) v gs = 10 v i d = 16 a r ds ( on) - on-resistance (nor malized) sou r ce-drain diode forward voltage v sd - source-to-dr ain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c 0 maximu m av alanche drain current vs. case temperature t c - case temperature (c) - dr ain current (a) i d 0 4 8 12 16 20 0 25 50 75 100 125 150 175 s a fe operating area v ds - dr ain-to-source voltage (v) - dr ain current (a) i d 10 0.1 0.1 1 10 1000 limited b y r ds ( on) 1 100 t c = 25 c single pulse 10 ms 100 ms , dc 100 s 10 s 100 1 ms no rmalized t hermal transient impedance, junction-to-case 0.02 s q uare w ave pulse duration ( sec ) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 normalized ef fective t ransient thermal impedance 0.2 0.1 duty cycle = 0.5 1 0.05 single pulse www.din-tek.jp dt u 1 6n25
1 to-252aa case outline note ? d im ension l3 is for reference only. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters in ches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 5.21 - 0.205 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.14 1.52 0.045 0.060 ecn: x12-0247 -rev. m, 24-dec-12 dwg: 5347 package information www.din-tek.jp
1 application note rec ommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) application note www.din-tek.jp
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